Infineon’s CoolGaN™ is a highly efficient GaN (gallium nitride) transistor technology for power conversion in the voltage range up to 600V. The pioneering quality ensures the highest standards and offers the most reliable and performing solution among all GaN HEMTs on the market. Switched-mode power circuits using CoolGaN™ can benefit from the improved energy efficiency and the improved power density, which is not possible with state-of-the-art silicon devices. In this forum, you can post your questions, comments, and feedback about CoolGaN™ devices and their applications.