HEMT (GaN) Forum Discussions
Half bridge circuit driving pure inductive load. 400V DC 12A pk. GS66508T 31mA draw so circuit power 12.6W. IGT60R070D1ATMA1 114mA, 45.6W. IGT60R070D1ATMA4 71mA 28.4W. A full generator circuit with output filter for 500W GS66508T achieves 96% overall conversion efficiency, IGT60R070D1ATMA4 only 93%. Thermal checks confirm electrical measurements. Similar clean trapezoidal drain voltage waveforms and triangular load currents. Only DC draw and power dissipation are markedly different and newer IGT "ATMA4" better than "ATMA1".
The two devices have outwardly similar characteristics see table, charges, resistance etc. So why the IGT losses so much larger?
The GaN systems device described as legacy but looks better than the preferred original Infineon part?Show Less
As we known，There are Two types of GaN hemt，one is GIT，the other is SG，so，how can I confirm which type of the device choose from datasheet.
THX SOOO Much!Show Less
I have designed a buck-boost circuit using the 1EDI20N12AF to drive the IGT60R070D1. When the load is 1kΩ, the circuit operates normally until the input voltage reaches 300V. After reaching 300V, it appears to experience overcurrent, and the external fuse on the input side blows. What could be causing this issue, and is it related to the HEMT? The driver waveform is shown in the attached image. After applying high voltage, the GaN driver exhibits a very high negative voltage spike. Is this normal?
"I designed a bidirectional buck-boost circuit combining 1EDI20N12AF and IGT60R070D1 based on their datasheets. However, there are some issues with the drive waveforms. The peak of the upper switch(Q20)'s drive waveform increases with the voltage, and after reaching a certain point, it exceeds 6V. Additionally, there is a severe resonance issue in the latter half of the negative voltage waveform. What is the cause of this, and how can it be resolved? I have tried replacing R162, R165, C88, and R168 with different parameters, but the issue still persists.It seems that this issue is causing all IGT60R070D1 devices to fail simultaneously when I apply high voltage input.
these are the sch and waveform.Hope you all can provide answers to the above. Thank you.
I wanted to know if Infineon has any kind of Multi-Project Wafer (MPW) program on the GaAs and GaN processes. If yes, what is the web link for the tape-out schedules?Show Less
The initial setting of the output voltage is 390V, but plan to use it at 380V.
Could you tell me how to change parts?
(Please let me know the number/value to be changed in the circuit diagram below)
Best regartds,Show Less
Hi, not sure if this is the correct forum for this question. The product is from GaN Systems, who I understood was recently acquired by Infineon. I previously raised a ticket on GaN Systems but to no avail, so thought that I try asking here.
I understand that the GS61008T (https://gansystems.com/gan-transistors/gs61008t/) is top-cooled. However, wonder if the thermal resistance value for junction-to-board (Theta_JB) is available?
As it is mentioned in the product status "on request" for the EVAL_3K6W_LLC_GAN(UG_201702_PL52_013). So I want to know the lead time of the product and the contact window to place the order.Show Less