HEMT (GaN) Forum Discussions
"I designed a bidirectional buck-boost circuit combining 1EDI20N12AF and IGT60R070D1 based on their datasheets. However, there are some issues with the drive waveforms. The peak of the upper switch(Q20)'s drive waveform increases with the voltage, and after reaching a certain point, it exceeds 6V. Additionally, there is a severe resonance issue in the latter half of the negative voltage waveform. What is the cause of this, and how can it be resolved? I have tried replacing R162, R165, C88, and R168 with different parameters, but the issue still persists.It seems that this issue is causing all IGT60R070D1 devices to fail simultaneously when I apply high voltage input.
these are the sch and waveform.Hope you all can provide answers to the above. Thank you.
The initial setting of the output voltage is 390V, but plan to use it at 380V.
Could you tell me how to change parts?
(Please let me know the number/value to be changed in the circuit diagram below)
Best regartds,Show Less
Hi, not sure if this is the correct forum for this question. The product is from GaN Systems, who I understood was recently acquired by Infineon. I previously raised a ticket on GaN Systems but to no avail, so thought that I try asking here.
I understand that the GS61008T (https://gansystems.com/gan-transistors/gs61008t/) is top-cooled. However, wonder if the thermal resistance value for junction-to-board (Theta_JB) is available?
As it is mentioned in the product status "on request" for the EVAL_3K6W_LLC_GAN(UG_201702_PL52_013). So I want to know the lead time of the product and the contact window to place the order.Show Less
Hello, I'm trying to build a similar totem pole PFC as described in “2500W full bridge totem pole power factor”.
Correction with CoolGaN”, however, I have a problem with the current acquisition approach that you described in this document. I've tested everything else in segments and they seem to work individually. But when I connect CS and GND ISO from shunts to the comparator the zero window net no longer works and there is no output from Pin 4 of comparator IC 200.
I'm also not sure how this current sensing approach even works, because from what I see it connects power ground, signal ground and DC ground, which doesn't make sense to me.
Some help would be much appreciated.
I am looking for the Altium (or whichever) design files for. We are looking at a reference design based on this board with the output changed to GaN. Not just gerbers but the actual design files.
I need a 98% efficient 54V power supply reference design, I know about INFIEON's 3.3KW 54V PSU, can you provide application note resources on this design?
Gate-Driver IC Progress Pushes SMPS to
New Levels of Power Density
By Hubert Baierl, Marketing Director, Infineon Technologies
Long-term durable galvanic isolation technology and multiple innovations
in gate-driver IC output stages and packages
rogress is a constant in many electronics areas. Nowadays, in 3.3-kW
switched-mode power supplies (SMPS) with 98% efficiency and 1U form
factor, power densities of 100 W/in.3
can be attained. This is made possible by a smart choice of superjunction power MOSFETs (e.g.,
CoolMOS™) and silicon carbide MOSFETs (e.g., CoolSiC™) in the totempole PFC stage and using gallium nitride power switches (e.g., CoolGaN™) to
operate the high-voltage LLC stage. Digital control of the PFC and the LLC is
indispensable, just as the use of planar magnetics and advanced gate-driver ICs
(e.g., EiceDRIVER™) play an important role in making this possible.
I am looking for the GAN FET solution with the below parameters.
Kindly suggest, if Infineon has the GANFET to meet the basic requirement.Show Less