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HEMT (GaN) Forum Discussions

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mkkim
HEMT (GaN)
Hi Infineon, I am trying to simulate the IGOT60R070 and IGOT60R070 for high-frequency (13.56MHz) in LTspice. However, I could not link the library mod... Show More
wohehe123
HEMT (GaN)
From the structure of GaN HEMT, I think it can realize the function of  a bidirectional switch. I wonder if there is any reference about HEMT used as ... Show More
abhinav_937
HEMT (GaN)
I'm wondering how the Heatsink is connected to the PCB of the Evaluation board EVAL_2EDB_HB_GaN. We are designing a half-bridge board using IGLD60R190... Show More
CuauhtemocSando
HEMT (GaN)
EVAL_ACF_65W_FULLGAN I am a professor of Power Electronics at INSTITUTO POLITECNICO NACIONAL, in Mexico City. My emails are: efrainsandoval.esime@gmail.com... Show More
Ahmetsirmaci
HEMT (GaN)
I'm trying to use "IFX_CoolGaN_Gen1_600V.lib" macro file with Tina-Ti sim, and getting error message: Missing number. Line: #93. R_CDS EDEP2 S R_CDS H... Show More
daniel3
HEMT (GaN)
Are there any reference designs (schematic and PCB layout) for half-bridge board using gate driver model: 2EDF7275KXUMA1 and GaN switch: IGLD60R190D1. Show More
Yahoo
HEMT (GaN)
I would like to see if I can use the how do I get the datasheet and check availability of the IGI60F2020A1L in an Active Clamp Forward converter? Show More
ManishM
HEMT (GaN)
Dear Community, I am trying to simulate 1. Transfer characteristics 2. Output Characteristics 3. Gate characteristics using the SiMetrix model. Howeve... Show More
KUOWENYUNG
HEMT (GaN)
Dear IFXer, May I know the following PCB and schematic can share the design source by Altium Design? https://www.infineon.com/dgdl/Infineon-Evaluation_board_EVAL_HB_GANIPS_G1-ApplicationNotes-v01_03-EN.pdf?fileId=5546d46278d64ffd01792281dd75012b Show More
EHEVCOSHEEN
HEMT (GaN)

What is the difference between the current detection position on A and B?

Forum Information

HEMT (GaN)

Infineon’s CoolGaN™ is a highly efficient GaN (gallium nitride) transistor technology for power conversion in the voltage range up to 600V. The pioneering quality ensures the highest standards and offers the most reliable and performing solution among all GaN HEMTs on the market. Switched-mode power circuits using CoolGaN™ can benefit from the improved energy efficiency and the improved power density, which is not possible with state-of-the-art silicon devices. In this forum, you can post your questions, comments, and feedback about CoolGaN™ devices and their applications.