GaN Forum Discussions
Hello team,
Hope you are doing well!
My customer is looking for an integrated power stage with Vds=100V, 15A/25A/35A, Rds(On)<10mΩ. So it’s a half-bridge connected FET with an integrated gate driver. QFN package is highly desired but not a must.
And these are the devices that their engineers are reviewing:
EPC:
TI:
Do you have any suggestions, or similar devices on the roadmap which we can introduce to the customer?
Thank you!
Jones
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There is a test P_H3TGS shown in above slide which I do not understand.
What is IGP=50mA? How do I setup to provide IGP=50mA?
Thanks & Regards,
Teoh.siow.khiang@pentamaster.com.my
Show LessHi,
We are designing a HV Buck converter with IGI60F1414A1L. The Altium symbol for the part has pins 12, 22 and 26 marked ar inverted, even the names i.e. INL_N, INH_N and EN_N indicate inverted functions. See below. This is not the case in the data sheet of course and I do think the symbol is wrong. Just wanted to make sure. Is the footprint verified and ok to use?
Regards
Ramin
Show LessHi
I am using GS66516T switch for my design. My topology contains two half bridges. The topology is a PFC and the design is for a 4kW design. When I increase the input voltage in light load, the converter operates properly till about Vin=205Vrms. But as soon as I increase the input voltage from 205Vrms to 207Vrms or more, the efficiency suddenly drops about 0.5 percent and if I let the converter work in this situation, the switches will blow.
If I test the converter in higher load, the drop in efficiency does not happen, or it happens in higher input voltage.
I checked everything in the operation and soft switching before and after the drop. The waveforms are the same before and after the drop, and I cannot see anything different except the drop in efficiency.
I would appreciate it if you help me in this problem.
Thanks
Show LessHello
It is described in the GS61008P data sheet.
Features
• Very high switching frequency (> 10 MHz)
Electrical characteristics do not specify maximum frequency in datasheet.
What is the maximum operating frequency of the GS61008P alone, without considering the performance of peripheral devices?
Thanks,
AkiTmt3
Hi!Guys. Do you know how to measure the package inductance and package capacitance of GaN HEMT?Thanks a lot.
Hello,
I would like any available documentation with the installed component values on the GaN Systems GSWP300W-EVBPA development board -- the Technical Manual provided on the GaN Systems website does not have a component-level schematic.
Thanks!
Matt
Show LessHi community,
we have a 1.5KW LLC application. The switching frequency is 1MHz. The input voltage is 400V DC, the output voltage unregulated approx. 12V. The maximum output current is 125A DC.
For the primary side H-bridge the IGI60F1414A1L would be a good solution?
Do you have any proposals for the H-bridge on the secondary side (synchronous rectifier)?
Maybe some Gan FETs need to be paralleled.
Best regards,
Jochen
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