HEMT (GaN) Forum Discussions
Hi,
I am trying to connect the infineon gate driver for high voltage GaN MOSFET and I have designed the attached Altium circuit. Can you tell me what is incorrect here and what can be done.
Thanks is advance.
Neha Agarwal
Show LessHello, I'm trying to build a similar totem pole PFC as described in “2500W full bridge totem pole power factor”.
Correction with CoolGaN”, however, I have a problem with the current acquisition approach that you described in this document. I've tested everything else in segments and they seem to work individually. But when I connect CS and GND ISO from shunts to the comparator the zero window net no longer works and there is no output from Pin 4 of comparator IC 200.
I'm also not sure how this current sensing approach even works, because from what I see it connects power ground, signal ground and DC ground, which doesn't make sense to me.
Some help would be much appreciated.
I am looking for the Altium (or whichever) design files for. We are looking at a reference design based on this board with the output changed to GaN. Not just gerbers but the actual design files.
thanks!!
KITMOTORDC250W24VTOBO1 |
I need a 98% efficient 54V power supply reference design, I know about INFIEON's 3.3KW 54V PSU, can you provide application note resources on this design?
Gate-Driver IC Progress Pushes SMPS to
New Levels of Power Density
By Hubert Baierl, Marketing Director, Infineon Technologies
Long-term durable galvanic isolation technology and multiple innovations
in gate-driver IC output stages and packages
P
rogress is a constant in many electronics areas. Nowadays, in 3.3-kW
switched-mode power supplies (SMPS) with 98% efficiency and 1U form
factor, power densities of 100 W/in.3
can be attained. This is made possible by a smart choice of superjunction power MOSFETs (e.g.,
CoolMOS™) and silicon carbide MOSFETs (e.g., CoolSiC™) in the totempole PFC stage and using gallium nitride power switches (e.g., CoolGaN™) to
operate the high-voltage LLC stage. Digital control of the PFC and the LLC is
indispensable, just as the use of planar magnetics and advanced gate-driver ICs
(e.g., EiceDRIVER™) play an important role in making this possible.
https://www.powersystemsdesignchina.com/Article/13104.html
Show LessI am looking for the GAN FET solution with the below parameters.
1. VDS=100V
2. ID>10A
Kindly suggest, if Infineon has the GANFET to meet the basic requirement.
Show LessHello! I have a problem in using an encrypted GaN transistor library (Gallium Nitride CoolGaN™ 600V e-mode HEMT SIMetrix & LTSpice ). Files are encrypted for particular versions of Spice and will not run on other versions. It seems PSpice has a problem reading encrypted library. Can you will let me have a file encrypted for PSpice?
Show LessKindly give a suggestion on the below items,
- The MOSFET from your inventory is capable of working in higher altitudes like 3000m to 5000m? if not, kindly suggest which MOSFET series is used for this specialization.
- Kindly suggest the GAN device series will be used for the above specifications.
Note: Consider the Ambient temperature maximum is 80 DegC; Maximum input voltage is 1000VDC & 100VDC.
Show LessWe are looking for an integrated and compact test system for JEDEC qualification and reliability testing of GaN HEMT power devices (for 200V / 650V range).
Any information regarding this will be helpful.
Show LessI remember the spice model for the IGLD60R190D1 was working before when I imported the lib file into LTSpice, created a symbol, and simulated it in December 2022.
But the latest version of this lib file from the product page shows lots of errors like can't find the definition of model "R_CDS", "R_CDG", R_CGS" etc...
Is there any old version of this spice model?
Show Less