Hello, I'm trying to build a similar totem pole PFC as described in “2500W full bridge totem pole power factor”.
Correction with CoolGaN”, however, I have a problem with the current acquisition approach that you described in this document. I've tested everything else in segments and they seem to work individually. But when I connect CS and GND ISO from shunts to the comparator the zero window net no longer works and there is no output from Pin 4 of comparator IC 200.

I'm also not sure how this current sensing approach even works, because from what I see it connects power ground, signal ground and DC ground, which doesn't make sense to me.

Some help would be much appreciated.

I am looking for the Altium (or whichever) design files for.  We are looking at a reference design based on this board with the output changed to GaN.  Not just gerbers but the actual design files.

thanks!!

I   need a 98% efficient 54V power supply reference design, I know about INFIEON's 3.3KW 54V PSU, can you provide application note resources on this design?

Gate-Driver IC Progress Pushes SMPS to
New Levels of Power Density
By Hubert Baierl, Marketing Director, Infineon Technologies
Long-term durable galvanic isolation technology and multiple innovations
in gate-driver IC output stages and packages
P
rogress is a constant in many electronics areas. Nowadays, in 3.3-kW
switched-mode power supplies (SMPS) with 98% efficiency and 1U form
factor, power densities of 100 W/in.3
can be attained. This is made possible by a smart choice of superjunction power MOSFETs (e.g.,
CoolMOS™) and silicon carbide MOSFETs (e.g., CoolSiC™) in the totempole PFC stage and using gallium nitride power switches (e.g., CoolGaN™) to
operate the high-voltage LLC stage. Digital control of the PFC and the LLC is
indispensable, just as the use of planar magnetics and advanced gate-driver ICs
(e.g., EiceDRIVER™) play an important role in making this possible.

https://www.powersystemsdesignchina.com/Article/13104.html

I am looking for the GAN FET solution with the below parameters. 

1. VDS=100V

2. ID>10A

Kindly suggest, if Infineon has the GANFET to meet the basic requirement.

Hello! I have a problem in using an encrypted GaN transistor library (Gallium Nitride CoolGaN™ 600V e-mode HEMT SIMetrix & LTSpice ). Files are encrypted for particular versions of Spice and will not run on other versions. It seems PSpice has a problem reading encrypted library. Can you will let me have a file encrypted for PSpice?

Kindly give a suggestion on the below items,

1. The MOSFET from your inventory is capable of working in higher altitudes like 3000m to 5000m? if not, kindly suggest which MOSFET series is used for this specialization.
2. Kindly suggest the GAN device series will be used for the above specifications.

Note: Consider the Ambient temperature maximum is 80 DegC; Maximum input voltage is 1000VDC & 100VDC.

We are looking for an integrated and compact test system for JEDEC qualification and reliability testing of GaN HEMT power devices (for 200V / 650V range).

Any information regarding this will be helpful.

I remember the spice model for the IGLD60R190D1 was working before when I imported the lib file into LTSpice, created a symbol, and simulated it in December 2022.

But the latest version of this lib file from the product page shows lots of errors like can't find the definition of model "R_CDS", "R_CDG", R_CGS" etc...

Is there any old version of this spice model?

IGLD60R190D1