Hello Miyata-san,
Unlike traditional MOSFETs, CoolGAN technology is not insulated, therefore it does not have a gate dielectric breakdown voltage.
Instead, as the ohmic p-gate forms a diode, it is forward biased by driving it forward.
CoolGAN technology is current driven.
This means that the gate voltage will be a function of this gate current, as well as the drain current.
From App Note:
"The gate voltage in the forward direction is a function of both gate current and drain current."
"Therefore, the datasheet does not specify a forward gate voltage limit, only a forward current limit."
When assessing the safety of CoolGAN devices, the gate voltage is not the key factor, but gate current is.
As long as the gate current limit is assured, there will be no gate failure.
Please understand that CoolGAN is an advanced technology that has key differences from traditional MOSFET technology.
Best regards,
Pablo
Hello Miyata-san,
Unlike traditional MOSFETs, CoolGAN technology is not insulated, therefore it does not have a gate dielectric breakdown voltage.
Instead, as the ohmic p-gate forms a diode, it is forward biased by driving it forward.
CoolGAN technology is current driven.
This means that the gate voltage will be a function of this gate current, as well as the drain current.
From App Note:
"The gate voltage in the forward direction is a function of both gate current and drain current."
"Therefore, the datasheet does not specify a forward gate voltage limit, only a forward current limit."
When assessing the safety of CoolGAN devices, the gate voltage is not the key factor, but gate current is.
As long as the gate current limit is assured, there will be no gate failure.
Please understand that CoolGAN is an advanced technology that has key differences from traditional MOSFET technology.
Best regards,
Pablo
