Gate Driver ICs Forum Discussions
Description
2ED020I06-FI is a high-voltage, high-speed power MOSFET and IGBT driver with interlocked high-side and low-side referenced outputs. The floating high-side driver can be powered directly or through a diode and capacitor. In addition to logic inputs for each drive, the 2ED020I06-FI is also equipped with a dedicated shutdown input. All logic inputs are 3.3 V and 5 V TTL compatible. The output drivers feature a high pulse current buffer stage designed for minimal driver cross-conduction. Propagation delay matched to simplify use in high frequency applications. Both drivers are designed to drive N-channel power MOSFETs or IGBTs up to 650V.
Feature
• 650V Coreless Transformer Isolated Driver IC
• Rail-to-rail output
•Protective function
• Floating high-side drive
• Dual Channel Undervoltage Lockout
• 3.3V and 5V TTL Compatible Inputs
Advantage
• Space saving package
• Fast and robust design
• Improved performance
• RoHS Compliant
Application
• Motor control and drive
• Solutions for solar systems
• Industrial welding
• Uninterruptible power supply (UPS)
Writing: Perceptive-ic(Solution provider)
Show LessEiceDRIVER™ Gate Driver ICs
Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application
EiceDRIVER™
1EDI Compact
Single channel IGBT gate driver IC in wide body package
Features
• Single channel isolated IGBT driver
• For 600 V/650 V/1200 V IGBTs and MOSFETs
• Up to 10 A typical peak current at rail-to-rail outputs
• Separate source and sink outputs
• Galvanically isolated coreless transformer driver
• Wide input voltage operating range
• Suitable for operation at high ambient temperature
Applications
• AC and brushless DC motor drives
• High voltage DC/DC-converter and DC/AC-inverter
• Induction heating resonant application
• UPS-systems, welding and solar
Product Type Output current configuration Package
1EDI05I12AH ±0.5 A PG-DSO-8-59
1EDI20I12AH ±2.0 A PG-DSO-8-59
1EDI20H12AH ±2.0 A for high speed IGBTs PG-DSO-8-59
1EDI40I12AH ±4.0 A PG-DSO-8-59
1EDI60I12AH ±6.0 A PG-DSO-8-59
1EDI60H12AH ±6.0 A for high speed IGBTs PG-DSO-8-59
Description
The 1EDI05I12AH, 1EDI20I12AH, 1EDI40I12AH,
1EDI60I12AH, 1EDI20H12AH and 1EDI60H12AH are
galvanically isolated single channel IGBT driver in a
PG-DSO-8-59 package that provide output currents up
to 10 A at separated output pins.
The input logic pins operate on a wide input voltage
range from 3 V to 15 V using scaled CMOS threshold
levels to support even 3.3 V microcontrollers.
Data transfer across the isolation barrier is realized by
the coreless transformer technology.
Every driver simsodep family member comes with logic input
and driver output undervoltage lockout (UVLO) and
active shutdown
OUT+
OUT+
Control
EiceDRIVERTM 1EDIxxy12AH
EiceDRIVERTM 1EDIxxy12AH
IN+
IN+
ININGND1
VCC1 VCC2,H
VCC2,L
GND2,L
GND1 GND2,H
VCC1
OUTOUT
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This method has the advantage of being both simple and low-cost. However, the requirement to refresh the charge on the bootstrap capacitor may result in limitations on the power converter’s duty-cycle and power switch’s on-time. Proper capacitor and bootstrap resistance selection can drastically reduce these limitations. For more information, please refer to the following two application notes:
https://www.infineon.com/dgdl/Infineon-Using+Monolithci+Voltage+Gate+Drivers-UM-v01_00-EN.pdf?fileId=5546d462584d1d4a01585242c11947b1
https://www.infineon.com/dgdl/an-978.pdf?fileId=5546d462533600a40153559f7cf21200 Show Less