Gate Driver ICs Forum Discussions
I have now a working half bridge circuit, and I am driving it with sinusoidal complementary pwm with proper dead time using arduino. Here is an image of a working circuit, the load is a low pass filter with 0.8 Mohm resistor to ground. The IR2104s are soldered to the green breakout boards for testing purposes. Mosfets are IRF520. Input voltage is the same for IR2104 and mosfets: 15v. So the actual circuit seems fine and working.
But when I only change the IR2104, the green breadboard, the HI signal is always low. I have now tested it with some 8 different IR2104 ICs. The circuit works fine again after inserting the 'working' IR2104.
The circuit is pretty much this one:
But with diodes and 1k resistors at the gates of the mosfets like in this circuit:
The bootstrap capacitor is 22uF (50v). Lower capacitance values worked ok for the frequency of the output ac signal above 100hz, but became distorted below that...
The LO output signal is always working fine but the HI side is giving zero volts. Also HIN and LIN are working.
I have tried to solder the ICs with extra care using 350 C temperature and just for 1 or 2 seconds per pin. Also tried heat gun with solder paste 350 C with no help... I always test the ICs after soldering for continuity and I discharge the capacitors between changes...
What am I doing wrong?!?
Thanks in advance!
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Could you please provide guidance on the methodology or equations required to calculate the values of these capacitors? Any insights or resources you could share would be immensely helpful in my analysis and design process.
Thank you very much for your attention to this matter. I look forward to your response and appreciate your assistance.
Best regards,
Show Lessrefer the title or subject (in an online forum)
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Show LessWe are using 2ED2410-EM ic for BMS project ,
We are using common Drain mosfet for this project in which -
INT,EN,INA,INB,CPN pins are pull up,
CPP ,CS01 & CS02 pull down with 82K with ground pin,
RS pin connect with 10E resistor with ground,
TMPO , TMP , DG0 ,DG1 float
ISP1&2 and ISN1&2 connect with shunt as per given in datasheet
When we connect ISP1&2 pin to Vs pin and IPN1&2 to GND pin then this IC works well and switch mosfet gate voltage is 12 volts, but when we connect this pin with shunt resistor to find out the current direction as given in the datasheet. If we use this we do not get any voltage on the MOSFET gate pin.
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Hi,
We are using BTT6010-1ERA as HSD in one of our project, where open load detection at inactive condition is a requirement.
it is mentioned in datasheet of BTT6010-1ERA as below
- Open load detection threshold in OFF state (VS - VOL(OFF)) is 4 to 6 volt
Need more clarity on above points, our understanding is as below.
- in order to detect open load condition @ off state, voltage difference between Vbat and VOL(OFF) should be 4 to 6 volt.
- For example Vbat = 24V and VOL(OFF) = 19V ,Then 24-19 = 5 ( satisfies the openload threshold detection condition)
Requesting to clarify whether our understanding is right or wrong.
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Dear Team,
I am sorry to have a fundamental question.
Should I warn (change) about CDESAT value in case Half Bridge or Full-Bridge ?
I think DESAT detection is same thing for both case, but how do you think?
My customer intends to use 1ED3321 for CoolSiC :IMW120R040M1H .
They use it for Single phase Full-Bridge , but they hope your advice.
Best Regards
Show LessI hope this message finds you well. I am reaching out to seek clarification regarding a specification mentioned in the datasheet of the IR2109(4)(S) component. Specifically, I am interested in understanding the meaning of the "VOFFSET = 600V max." specification listed in the datasheet. Could you please provide further information or clarification regarding this parameter? Upon conducting initial research, I encountered information suggesting that this specification indicates the electrical isolation capability of the IR2109(4)(S), allowing it to withstand voltages of up to 600 volts. Consequently, it implies that the component can be safely utilized in applications where high voltages are required, such as the control of MOSFETs or IGBTs in high-voltage configurations. Could you confirm whether this interpretation is accurate or provide any additional insights into the significance of the VOFFSET specification in the context of the IR2109(4)(S) component? Thank you in advance for your assistance. I look forward to hearing from you soon. Best regards,
Show LessWill the 1EDN7136G gate driver do 100% duty cycle?
Per the simulation it can. But per the datasheet it is unclear.
I'm looking for a way to keep the GS61008P ON in a high side switch configuration.
Thanks in advance.
Show LessIs there a function replacement for the IR2085S. Customer working on a Commercial AC application.