Gate Driver ICs Forum Discussions

Hello,

   Can anyone pass the link for eagle model of gate driver auirs2191s. 

Regards, 

Akshay

HI All

Please advise if there is a workbook available to calculate all the requirements for the 2ED2410 driver 

Spreadsheet based would be preferable

Hello infineon I am Kim, a student studying in Korea.
One challenge was encountered while implementing a motor drive system.
IPTC015N10NM5 is used as a switching element and 6EDL04N02PT/DSO-28 is used as a gate driver.
pwm is normally input up to the inputs (HIN1, HIN2) of the gate driver, but if you observe the output terminals HO1 and LO1 with an oscilloscope, you can observe the non-sinusoidal output as shown in the attached picture.
Also, as a result of checking VB1 and VS1, there was nothing wrong with 15V.
I don't know which part is the problem, so I'll attach the circuit diagram.
Please help me.

Hi there,

As topic, I am confused with this 'latent fault warning' feature in TLE9180. More specifically what is the condition for lfw bit being setted in register Ser (addr 0x42)? I can't find any information in the datasheet or on MyISP website.

Thanks for reading, any reply is appreciated.

Hi,

We are doing MTBF calculation. We are using  Infineon part PVDZ172NSPBF in that project. Could you please share AIF value or Failure rate for MTBF calculation.

Part number used is PVDZ172NSPBF.

Regards

Nikhitha antony

Hello everyone,

I am looking for a gate-driver IC, which need to possess high insulation characteristics. I am trying to build a 3-phase bidirectional inverter (2 Level AFE) with a DC-Link voltage of 1200V. Where a RMS-voltage of 1200V appears across power modules (in my case are SiC-MOSFET power modules). Therefore there should be an Isolation between high- and low voltage sides accordingly. I've checked the Infineon's gate driver ICs  but the maximum isolation working voltage (in RMS) is not mentioned in most of the driver data sheets. "Reinforced insulation data according to VDE 0884-11" and "according to time dependent dielectric breakdown voltage TDDB test". There are some IC data sheets, in which this voltage of Viowm = 1000V is given, but it is not enough for my application voltage of 1200V. I've found a IC from texas instruments, and all isolation datas are given in data sheet. I've attached a screenshot of isolation part.  But the problem is this IC and many of Infineon ICs are not available. 

best regards

ergin

2ED2109S06Fのデータシート表記に関するご質問です。

p.1のFeaturesに「3.3 V, 5 V and 15 V input logic compatible」との記載がありますが、

p.6のTable 4 Recommended operating conditionsでは、VINのMaxが「5 / (VSS + 5)」と記載されております。

IN端子、SD端子には12Vを入力予定ですが、問題ないでしょうか。

https://www.infineon.com/dgdl/Infineon-2ED2109-4-S06F-J-DataSheet-v02_31-EN.pdf?fileId=5546d4626cb27db2016cb8d7493e29eb

ご担当者様

1ED3491MC12Mのデータシートスペックに関して確認させてください。

P34にはION=11A(typ)、IOFF=7.5A(typ)と記載がございますが、P41記載の絶縁特性項目には1ED3491MCのIoutは7.2Aと記載がございます。

こちらのP41記載の値の意味に関してご教示頂ければと思います。

データシート記載の絶縁耐圧を担保するためにはTable21記載の値で使用しなければならないという事でしょうか？

■型番：1ED3491MC 

https://www.infineon.com/dgdl/Infineon-1ED34x1Mx12M-DataSheet-v01_10-EN.pdf?fileId=5546d46274cf54d50174d97c2fb71f62

■データシート抜粋

以上、宜しくお願い致します。