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Dear Infineon:
Current I have one device for choosing how to driver it.
- In direct mode with GPIO control of device. Which GPIO1 controls the DSG FET, another GPIO2 controls the CHG FET.
- Register Control can be configured as simple control mode. Logic: rising edge active? or level active?
Some comments for my reference? or data for my study?
Solved! Go to Solution.
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Hi Simon,
MOSFET selection:
You can choose MOSFET in the below link based on your current requirement. VDs 150Vds ,
Id @ 100 deg C should be 1.5 times your max current.
Gate Driver:
Switiching MOSFET
Gate driver requires active high and Low to switching MOSFET. Below llink will give you detailed explanation about driving MOSFET.
I have one question
Rising edge active or level active, is this about MCU internal thing?
Regards,
Vignesh kumar
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Hi Simon,
Thanks for posting on the Infineon community,
Could you please elaborate more?
Regards,
Vignesh kumar
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Hi Vignesh:
Thank you for your support!
Battery nominal voltage is 57.6V, Max Voltage is 67.2V.
GPIO output voltage is 3.3V or 5V.
Would you please help to recommend one type of N-CH MOSFET for my study?
One driver by pin CHG/DSG which is reach to Vtop voltaeg.
Another driver by GPIO1,2 which is reach to 3.3V OR 5V.
Can I learn which parameters of MOSFET be decided to choose the rising edge active or level active?
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Hi Simon,
MOSFET selection:
You can choose MOSFET in the below link based on your current requirement. VDs 150Vds ,
Id @ 100 deg C should be 1.5 times your max current.
Gate Driver:
Switiching MOSFET
Gate driver requires active high and Low to switching MOSFET. Below llink will give you detailed explanation about driving MOSFET.
I have one question
Rising edge active or level active, is this about MCU internal thing?
Regards,
Vignesh kumar
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Thank you very much!
I will continue to do study it.