Is the iED020i12-F2 IGBT gate driver suitable for driving SiC MOSFETs

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When I used the 1ED010i12-F2 to drive the SiC MOSFET (C3M0075120D), I had a problem with gate current oscillation. The red waveform is shown below, and the higher the bus voltage (buck circuit), the peak oscillation current of the gate also increases. The oscillation current reaches 3A when the bus voltage is 180V (the green waveform of channel 4 is the gate voltage waveform), so I wonder if this is because the gate driver of this IGBT cannot drive the SiC MOSFET. Furthermore, since the theoretical maximum gate current = driving voltage/internal resistance+external resistor = 20/9+6 = 1.3A, this far exceeds the theoretical value, I would like to ask if you understand the reason why this gate current oscillates and exceeds the theoretical value of the current.

blinker_0-1705484377236.png

 

smartconx_target@Q!w2e3r4t5y6u7i8o9p0||/t5/%E9%97%A8%E7%BA%A7%E9%A9%B1%E5%8A%A8%E5%99%A8/IED020I12-F2%E8%BF%99%E6%AC%BEigbt%E6%A0%85%E6%9E%81%E9%A9%B1%E5%8A%A8%E5%99%A8%E6%98%AF%E5%90%A6%E5%8F%AF%E4%BB%A5%E9%80%82%E7%94%A8%E4%BA%8E%E9%A9%B1%E5%8A%A8SiC-MOSFET/td-p/678269

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Hello. This driver chip can be used to drive SiC MOSFETs. Infineon has a technical document on Eicedriver, which is about gate oscillation on page 7. The theoretically calculated peak gate current does not take into account oscillation, and the peak value generated by oscillation must be higher than the calculated value.

Gate oscillation is caused by parasitic inductance and gate capacitance, and can be optimized by the following means:

1. Optimize the PCB layout to reduce parasitic inductance,

2. Or use a larger Rgon, but the efficiency will be reduced

 

smartconx_target@Q!w2e3r4t5y6u7i8o9p0||/t5/%E9%97%A8%E7%BA%A7%E9%A9%B1%E5%8A%A8%E5%99%A8/IED020I12-F2%E8%BF%99%E6%AC%BEigbt%E6%A0%85%E6%9E%81%E9%A9%B1%E5%8A%A8%E5%99%A8%E6%98%AF%E5%90%A6%E5%8F%AF%E4%BB%A5%E9%80%82%E7%94%A8%E4%BA%8E%E9%A9%B1%E5%8A%A8SiC-MOSFET/m-p/678690

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Hello. This driver chip can be used to drive SiC MOSFETs. Infineon has a technical document on Eicedriver, which is about gate oscillation on page 7. The theoretically calculated peak gate current does not take into account oscillation, and the peak value generated by oscillation must be higher than the calculated value.

Gate oscillation is caused by parasitic inductance and gate capacitance, and can be optimized by the following means:

1. Optimize the PCB layout to reduce parasitic inductance,

2. Or use a larger Rgon, but the efficiency will be reduced

 

smartconx_target@Q!w2e3r4t5y6u7i8o9p0||/t5/%E9%97%A8%E7%BA%A7%E9%A9%B1%E5%8A%A8%E5%99%A8/IED020I12-F2%E8%BF%99%E6%AC%BEigbt%E6%A0%85%E6%9E%81%E9%A9%B1%E5%8A%A8%E5%99%A8%E6%98%AF%E5%90%A6%E5%8F%AF%E4%BB%A5%E9%80%82%E7%94%A8%E4%BA%8E%E9%A9%B1%E5%8A%A8SiC-MOSFET/m-p/678690

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Thank you so much for your response, the technical documentation you provided is very meaningful. But I still want to ask

① Does the peak oscillation value (3A) exceeding the current output capability (2A) of the driver chip affect the life of the driver chip?

② There is no oscillation problem with the driving circuit here without the power circuit, but when the power circuit is added, it causes that kind of oscillation. It feels like it is caused by the parasitic inductance of the power circuit, so would it be better to use a switch device with a Kelvin pin?

smartconx_target@Q!w2e3r4t5y6u7i8o9p0||/t5/%E9%97%A8%E7%BA%A7%E9%A9%B1%E5%8A%A8%E5%99%A8/IED020I12-F2%E8%BF%99%E6%AC%BEigbt%E6%A0%85%E6%9E%81%E9%A9%B1%E5%8A%A8%E5%99%A8%E6%98%AF%E5%90%A6%E5%8F%AF%E4%BB%A5%E9%80%82%E7%94%A8%E4%BA%8E%E9%A9%B1%E5%8A%A8SiC-MOSFET/m-p/679345

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The test point for oscillation is between the parasitic inductor and the gate of the MOSFET. This oscillation current is neither generated by the driver chip nor poured back into the driver chip. Using MOSFETs with kelvin sources helps improve oscillations.

smartconx_target@Q!w2e3r4t5y6u7i8o9p0||/t5/%E9%97%A8%E7%BA%A7%E9%A9%B1%E5%8A%A8%E5%99%A8/IED020I12-F2%E8%BF%99%E6%AC%BEigbt%E6%A0%85%E6%9E%81%E9%A9%B1%E5%8A%A8%E5%99%A8%E6%98%AF%E5%90%A6%E5%8F%AF%E4%BB%A5%E9%80%82%E7%94%A8%E4%BA%8E%E9%A9%B1%E5%8A%A8SiC-MOSFET/m-p/686577

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