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Hello,
1. Digikey discribes this ic as 'IC IGBT DVR 1200V DSO8' however there is no mention of it being able to drive an IGBT in the datasheet. It only speaks to driving MOSFETs. We have already taken into consideration the correct voltages for switching but just to be sure, is it possible for this ic to drive IGBTs?
2. We are using transformer technology in our design, would it be alright to run wires under this gate driver. Would there be a chance of causing any interference if this is done?
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Gate Driver IC's
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Hi,
Thank you for posting at Infineon community.
1) Yes as per the data sheet the IC is for MOSFET. However, if you wish you can use it for IGBT as well. While using it for IGBT the only change you have to do is to connect the GND2 (secondary side ground) to negative voltage to drive your IGBT safely during turn off to avoid spurious turn on.
As you told you have already considered correct voltage for switching, its good and make sure the switching frequency is also under maximum operating value to avoid any thermal run away of IC.
2) Yes, there could be some interference wile routing under gate driver but that can only be ensured when you completely design it and test. Some, design tips I would like to share with you are as follows-
a) Try to keep the different ground away to each other and in best practice never keep them intersecting (if intersection cant be avoided then try to keep the different grounds at different PCB layer) .
b) The interference can happen between signals but, fastest interference happens between two high switching frequency signals close to each other. So, while designing try to keep this in mind.
c) Specifically to transformer, it has some parasitic capacitance across its terminals and between primary and secondary side. If you operate it at high frequency, it may lead to interferences with near by signals. So, try to keep your gate driver and transformer connections parallel and at some distance to each other or route the signals on different PCB layers (if you are using PCB).
I hope the information shared is useful.
BR,
AZIZ HASSAN
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Hi,
Thank you for posting at Infineon community.
1) Yes as per the data sheet the IC is for MOSFET. However, if you wish you can use it for IGBT as well. While using it for IGBT the only change you have to do is to connect the GND2 (secondary side ground) to negative voltage to drive your IGBT safely during turn off to avoid spurious turn on.
As you told you have already considered correct voltage for switching, its good and make sure the switching frequency is also under maximum operating value to avoid any thermal run away of IC.
2) Yes, there could be some interference wile routing under gate driver but that can only be ensured when you completely design it and test. Some, design tips I would like to share with you are as follows-
a) Try to keep the different ground away to each other and in best practice never keep them intersecting (if intersection cant be avoided then try to keep the different grounds at different PCB layer) .
b) The interference can happen between signals but, fastest interference happens between two high switching frequency signals close to each other. So, while designing try to keep this in mind.
c) Specifically to transformer, it has some parasitic capacitance across its terminals and between primary and secondary side. If you operate it at high frequency, it may lead to interferences with near by signals. So, try to keep your gate driver and transformer connections parallel and at some distance to each other or route the signals on different PCB layers (if you are using PCB).
I hope the information shared is useful.
BR,
AZIZ HASSAN
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Thanks so much for the speedy and informative solution!
Do you have a suggestion for the minimum distance between the ground wires on the same layer as mentioned in 2a of your answer?
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Hi,
Sorry I don't have any number for this since it purely dependent upon EMI level and other factor.
BR,
AZIZ HASSAN