Calculation of maximum switching frequency for SiC Schotty Barrier Diodes

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Valentinttz
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Hello everyone!

 

I would like to know if there is a way to calculate the maximum switching frequency for SiC SBDs, based on the data provided in the datasheet? The goal is not to have a value for a precise operating point, but to make a performance comparison between different diode references.

 

Thanks in advance.

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1 Solution
Vicky_S
Moderator
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10 likes received 5 likes given 100 replies posted

Hello, 
For SiC Schottky Diode, junction capacitance is the frequency limiting parameter. As the frequency increases, the capacitance impedance decreases and the displacement current increases significantly, but this may take place in MHz frequency range for AC rectification.
For converter applications in kHz frequency range, the parameter that may cause the failure of the device, even if the pulse voltages are significantly lower than the static block voltages, is stippness (dv / dt) of the voltage transients. This parameter is mentioned in the Datasheet.


Please go through the references for more details,
1. Infineon white papers
2
. "Evaluation of High Frequency Switching Capability of SiC
       Schottky Barrier Diode, Based on Junction Capacitance Model"

Best regards,
Vicky S

View solution in original post

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Vicky_S
Moderator
Moderator
Moderator
10 likes received 5 likes given 100 replies posted

Hello, 
We are looking at your query and will get back to you soon.

Best regards,
Vicky S

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Vicky_S
Moderator
Moderator
Moderator
10 likes received 5 likes given 100 replies posted

Hello, 
For SiC Schottky Diode, junction capacitance is the frequency limiting parameter. As the frequency increases, the capacitance impedance decreases and the displacement current increases significantly, but this may take place in MHz frequency range for AC rectification.
For converter applications in kHz frequency range, the parameter that may cause the failure of the device, even if the pulse voltages are significantly lower than the static block voltages, is stippness (dv / dt) of the voltage transients. This parameter is mentioned in the Datasheet.


Please go through the references for more details,
1. Infineon white papers
2
. "Evaluation of High Frequency Switching Capability of SiC
       Schottky Barrier Diode, Based on Junction Capacitance Model"

Best regards,
Vicky S

Hello Vicky,

Thank you for your response.

Best regards,
Valentin

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Vicky_S
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10 likes received 5 likes given 100 replies posted

Hello Valentine, 
Please provide your consent to close this thread. 

Best regards,
Vicky S

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