GaN Forum Discussions
Hi Experts, Recently I was evaluating the dynamic performance of GaN MOS, the device model is GS-065-030. while doing the double pulse test, I found that the Ids current oscillates badly during switching, which makes it impossible to estimate the switching loss and other parameters. May I ask what could be the cause of this?
The measured waveforms are shown below, the blue Vm channel is the Ids current waveform grabbed using the SSDN-414-010 (10mohm) shunt. The purple color is the waveform grabbed using the current probe at the load inductor side.
smartconx_target@Q!w2e3r4t5y6u7i8o9p0||/t5/HEMT-GaN/%E6%B0%AE%E5%8C%96%E9%95%93%E5%8F%8C%E8%84%89%E5%86%B2%E6%B5%8B%E8%AF%95/td-p/709754
Show LessI have ordered a GAN Daughter Card (GS66508T), Can Anyone confirm whether it is Gate Driver only or Gate Driver Plus GAN switches?
Hi,
I’m designing a 7 kW converter in which each switch conducts 30 A RMS. However, when I analyze the Safe Operating Area (SOA) of the IGOT60R042D1 MOSFET, I observe that at 400 V and 10 μs, the device is only capable of conducting 2 A. ¿ Is this correct, or am I mistaken?
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Does GaN mosfet not have this device? I need to purchase a gallium nitride chip to be placed in a motor driven inverter. Before doing so, I need to conduct simulation calculations using Simulator, which can only feature model IGBT and MOSFET classes. Excuse me, is there a gallium nitride chip that meets the requirements?
smartconx_target@Q!w2e3r4t5y6u7i8o9p0||/t5/HEMT-GaN/Gallium-nitride-modeling/td-p/713136
Show LessWe are planning to use High current Gan FET
Below mentioned our requirement follow this,
1. DC continuous 150A and Above
2.VDS=150V and above
2.VGS = 10V
3.Low RDSon Example
4.Low input and output capacitance
kindly share Gan FET part number and datasheet
Show LessHi,
There is an evaluation board for the IGI60F1414A1L GaN half bridge but its not possible to buy. I was wondering if you could share the so called exclusive information, possibly CAD and Gerber files and more. We are planning to design a HV Buck converter with the part.
Regards/Ramin
Show LessHello team,
Hope you are doing well!
My customer is looking for an integrated power stage with Vds=100V, 15A/25A/35A, Rds(On)<10mΩ. So it’s a half-bridge connected FET with an integrated gate driver. QFN package is highly desired but not a must.
And these are the devices that their engineers are reviewing:
EPC:
TI:
Do you have any suggestions, or similar devices on the roadmap which we can introduce to the customer?
Thank you!
Jones
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There is a test P_H3TGS shown in above slide which I do not understand.
What is IGP=50mA? How do I setup to provide IGP=50mA?
Thanks & Regards,
Teoh.siow.khiang@pentamaster.com.my
Show LessHi,
We are designing a HV Buck converter with IGI60F1414A1L. The Altium symbol for the part has pins 12, 22 and 26 marked ar inverted, even the names i.e. INL_N, INH_N and EN_N indicate inverted functions. See below. This is not the case in the data sheet of course and I do think the symbol is wrong. Just wanted to make sure. Is the footprint verified and ok to use?
Regards
Ramin
Show LessHi
I am using GS66516T switch for my design. My topology contains two half bridges. The topology is a PFC and the design is for a 4kW design. When I increase the input voltage in light load, the converter operates properly till about Vin=205Vrms. But as soon as I increase the input voltage from 205Vrms to 207Vrms or more, the efficiency suddenly drops about 0.5 percent and if I let the converter work in this situation, the switches will blow.
If I test the converter in higher load, the drop in efficiency does not happen, or it happens in higher input voltage.
I checked everything in the operation and soft switching before and after the drop. The waveforms are the same before and after the drop, and I cannot see anything different except the drop in efficiency.
I would appreciate it if you help me in this problem.
Thanks
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